PURPOSE: A chemical vapor deposition apparatus is provided to improve uniformity of a film by rotating the only wafer pocket in a susceptor while fixing a susceptor body. CONSTITUTION: A gas inlet(20) supplies the reaction gas of the outside to a chamber(10). A susceptor(40) is fixed in the chamber. A wafer pocket(41) rotates in the susceptor when the wafer is loaded in the wafer pocket. The susceptor has a separate structure to rotate and combine the wafer pocket. The susceptor is fixed in the center of the chamber without rotation. A driver(30) rotates the wafer pocket.
