发明名称 |
ION IMPLANTATION DEVICE WITH A DUAL PUMPING MODE AND METHOD THEREOF |
摘要 |
An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production. |
申请公布号 |
KR20090116692(A) |
申请公布日期 |
2009.11.11 |
申请号 |
KR20097011436 |
申请日期 |
2007.11.08 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;OLSON JOSEPH C. |
发明人 |
OLSON JOSEPH C.;ENGLAND JONATHAN GERALD;HATEM CHRISTOPHER R.;SCHEUER JAY THOMAS |
分类号 |
H01L21/265;H01J37/30 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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