发明名称 Fabrication of metallic hollow nanoparticles
摘要 Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.
申请公布号 US9446953(B2) 申请公布日期 2016.09.20
申请号 US200812315519 申请日期 2008.12.04
申请人 The United States of America as represented by the Administrator of the National Aeronautics and Space Administration 发明人 Kim Jae-Woo;Choi, Sr. Sang H.;Lillehei Peter T.;Chu Sang-Hyon;Park Yeonjoon;King Glen C.;Elliott James R.
分类号 B22F9/24;C01B19/00;B01J13/02;B22F1/00;B82Y5/00;B82Y30/00;H01L21/02 主分类号 B22F9/24
代理机构 代理人 Riley Jennifer L.;Edwards Robin W.
主权项 1. A process for the fabrication of hollow metallic nanoshells, which process comprises: (a) providing at least one amine terminal dendrimer molecule; (b) promoting growth of the at least one amine terminal dendrimer molecule to form a dendrimer structure, having at least one surface amine group, for use as a template for the hollow metallic nanoshells; (c) attaching at least one metallic ion to the at least one surface amine group; (d) further attaching at least one metallic ion to the at least one surface amine group by adding additional metallic ions, boric acid, and a reducing agent, such that a wall forming at least one hollow metallic nanoshell is formed; and (e) removing the dendrimer structure from the hollow metallic nanoshells.
地址 Washington DC US