WAFER PROCESSING HARDWARE FOR EPITAXIAL DEPOSITION WITH REDUCED AUTO-DOPING AND BACKSIDE DEFECTS

摘要

PURPOSE: The wafer process hardware is provided to deposit an epitaxial semiconductor layer for reducing the auto-doping and a rear defect. CONSTITUTION: A wafer gap region(212) with the controllable thickness and a region between a rear surface of a substrate and a susceptor plate(205) is formed. An auto-dopant is exhausted from the wafer gap region by the inactive gas while blocking the flow of the inactive gas on the substrate. The reactive gas is flowed on the surface of the substrate while blocking the flow of the reactive gas near the rear surface of the substrate.