发明名称 Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode
摘要 <p>The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor. <IMAGE></p>
申请公布号 EP1288977(B1) 申请公布日期 2009.11.11
申请号 EP20020102230 申请日期 2002.08.28
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CRENSHAW, DARIUS L.;JACOBSEN, STUART M.;SEYMOUR, DAVID J.
分类号 H01C7/00;H01H1/00;H01H59/00;H01L21/822;H01L27/04;H01P1/10 主分类号 H01C7/00
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