发明名称 |
Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode |
摘要 |
<p>The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor. <IMAGE></p> |
申请公布号 |
EP1288977(B1) |
申请公布日期 |
2009.11.11 |
申请号 |
EP20020102230 |
申请日期 |
2002.08.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CRENSHAW, DARIUS L.;JACOBSEN, STUART M.;SEYMOUR, DAVID J. |
分类号 |
H01C7/00;H01H1/00;H01H59/00;H01L21/822;H01L27/04;H01P1/10 |
主分类号 |
H01C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|