发明名称 Method for plasma processing by shaping an induced electric field
摘要 A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.
申请公布号 USRE40963(E1) 申请公布日期 2009.11.10
申请号 US20030625669 申请日期 2003.07.24
申请人 TOKYO ELECTRON LIMITED 发明人 ISHII NOBUO;HATA JIRO
分类号 H05H1/16;H01J37/32;H05H1/46 主分类号 H05H1/16
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