ESD protection circuit for high speed signaling including T/R switches

摘要

An ESD protection circuit for a transistor having a drain and source coupled to high-speed signaling pins of an integrated circuit includes a first string of clamping elements and a second string of clamping elements. The first string of clamping elements has a collective capacitance less than the capacitance of a single clamping element. The first string of clamping elements is operably coupled to the drain and source of the transistor and conducts when a first polarity ESD voltage is applied to the high-speed pins. The second string of clamping elements has a collective capacitance less than the capacitance of one clamping element. The second string of clamping elements is operably coupled to the drain and source of the transistor and conducts when a second polarity ESD voltage is applied to the high speed signaling pins.