发明名称 |
Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
摘要 |
A semiconductor structure having a surface layer disposed over a substrate, the surface layer including strained silicon. A contact layer is disposed over a portion of the surface layer, the contact layer including a metal-semiconductor alloy. A bottommost boundary of the contact layer is disposed above a bottommost boundary of the surface layer.
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申请公布号 |
US7615829(B2) |
申请公布日期 |
2009.11.10 |
申请号 |
US20020164988 |
申请日期 |
2002.06.07 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
LOCHTEFELD ANTHONY J.;LANGDO THOMAS A.;WESTHOFF RICHARD |
分类号 |
H01L27/088;H01L21/336;H01L29/10;H01L29/45;H01L29/80 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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