| 摘要 |
This invention provides a process for producing a group III nitride crystal, which can eliminate the need to adopt an MOVPE process and can use an inexpensive starting material to reduce the production cost and, at the same time, can produce an aluminum-type group III nitride crystal layer having a smooth surface and good crystallinity through the adoption of only a HVPE process which can realize high-speed film formation. A group III nitride crystal is produced by an HVPE process comprising the step of bringing a heated single crystal substrate into contact with a starting gas containing a compound containing a halide of a group III element and a nitrogen atom for vapor growth of a group III nitride crystal layer on the single crystal substrate. In this case, an intermediate layer is formed by vapor growth of a group III nitride crystal on a single crystal substrate heated to a temperature of 1000°C or above and below 1200°C. Subsequently, the temperature of the intermediate layer on the substrate is brought to 1200°C or above, and the group III nitride crystal is further formed by vapor growth on the intermediate layer.
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