METHOD OF PRODUCING GROUP 3 NITRIDE SUBSTRATE WAFERS AND GROUP 3 NITRIDE SUBSTRATE WAFERS

摘要

Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10�m or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200�m or less and a vertical depth of 100�m or less.