发明名称 N-TYPE ZINC ANTIMONY-BASED COMPOUND THERMOELECTRIC SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide, especially, an n-type zinc antimony-based compound thermoelectric semiconductor with respect to a thermoelectric semiconductor material which directly transduces heat into electric power. SOLUTION: Nitride is added to a zinc antimony-based compound (ZnSb,β-Zn<SB>4</SB>Sb<SB>3</SB>) which directly transduces heat into electric power. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009260321(A) 申请公布日期 2009.11.05
申请号 JP20090072844 申请日期 2009.03.24
申请人 SHIMANE UNIV 发明人 HASEZAKI KAZUHIRO
分类号 H01L35/18;H02N11/00 主分类号 H01L35/18
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