发明名称 Magnetisches Speicherzellenfeld mit benachbarter gekoppelter weichmagnetischer Schicht
摘要 An MTJ element (10) is formed between orthogonal word (20) and bit lines (30). The bit line (30) is a composite line which includes a high conductivity layer (34) and a soft magnetic layer (32) under the high conductivity layer (34). During operation, the soft magnetic layer (32) concentrates the magnetic field of the current and, due to its proximity to the free layer (70), it magnetically couples with the free layer (70) in the MTJ (10). This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer (70) during formation.
申请公布号 DE602005016749(D1) 申请公布日期 2009.11.05
申请号 DE20056016749T 申请日期 2005.06.14
申请人 HEADWAY TECHNOLOGIES INC.;APPLIED SPINTRONICS INC. 发明人 YIMIN, GUO;TAI, MIN;POKANG, WANG;XI-ZENG, SHI
分类号 G11C11/16;A61K31/404;C07D209/08;H01L27/22;H01L43/08 主分类号 G11C11/16
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