发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that easily manufactures the semiconductor device and is excellent in productivity. <P>SOLUTION: The method of manufacturing the semiconductor device includes the processes of: dicing a semiconductor wafer to a predetermined depth from the side of a circuit surface S1 to form a plurality of cut grooves that do not penetrate the semiconductor wafer on the side of the circuit surface S1; forming an insulating resin layer 18 covering a plurality of projection electrodes 10a on the circuit surface S1; grinding the semiconductor wafer from the side of a reverse surface of the semiconductor wafer up to the plurality of cut grooves to divide the semiconductor wafer into a plurality of individual semiconductor chips 24 in a state wherein the insulating resin layer 18 is connected; and sticking a support tape 28 on the reverse surface S3 and extending the support tape 28 along the main surface of the support tape 28 to cut the insulating resin layer 18 in conformity with outer shapes of the plurality of semiconductor chips 24. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009260226(A) 申请公布日期 2009.11.05
申请号 JP20080246723 申请日期 2008.09.25
申请人 HITACHI CHEM CO LTD 发明人 ENOMOTO TETSUYA;HONDA KAZUTAKA;NAGAI AKIRA;HATAKEYAMA KEIICHI
分类号 H01L21/301;H01L21/60;H01L23/12 主分类号 H01L21/301
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