| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element, which can improve current injection efficiency into an active layer. SOLUTION: The manufacturing method includes steps of: forming a semiconductor mesa part including a p-type buffer layer, an active layer and an n-type clad layer on a surface of a p-type InP substrate; depositing an n-type semiconductor layer on an exposed surface of the p-type InP substrate and a side surface of the semiconductor mesa part; selectively etching the n-type semiconductor layer deposited on the side surface of the semiconductor mesa part to expose a side surface of the active layer; and forming a semi-insulating embedding layer on the n-type semiconductor layer and a side part of the semiconductor mesa part after the etching process. COPYRIGHT: (C)2010,JPO&INPIT
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