发明名称 |
MITIGATION OF EDGE DEGRADATION IN FERROELECTRIC MEMORY DEVICES THROUGH PLASMA ETCH CLEAN |
摘要 |
A ferroelectric memory device is fabricated while mitigating edge degradation. A bottom electrode is formed over one or more semiconductor layers. A ferroelectric layer is formed over the bottom electrode. A top electrode is formed over the ferroelectric layer. The top electrode, the ferroelectric layer, and the bottom electrode are patterned or etched. A dry clean is performed that mitigates edge degradation. A wet etch/clean is then performed.
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申请公布号 |
US2009275148(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20090502571 |
申请日期 |
2009.07.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
UDAYAKUMAR KEZHAKKEDATH R.;HALL LINDSEY H.;CELII FRANCIS G. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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