发明名称 LED STRUCTURE TO INCREASE BRIGHTNESS
摘要 <p>A light emitting semiconductor device comprising an LED having an emission aperture located on a surface of the LED and the emission aperture has a size that is smaller than a surface area of the LED where the emission aperture is formed. The device further includes a reflector surrounding both side walls, a bottom surface, and portions of a surface of the LED where the emission aperture is formed or surrounding the bottom surface and portions of the surface of the LED where the emission aperture is formed so that an area on the surface uncovered by the reflector is the emission aperture and is smaller than the area of the LED. Alternatively, in the light emitting semiconductor, the surface of the LED substantially aligned with the emission aperture may be roughened and the surface of the LED beyond the emission aperture may be smooth. The surface of the LED beyond the emission aperture may also be covered by a low loss reflector.</p>
申请公布号 WO2009135188(A2) 申请公布日期 2009.11.05
申请号 WO2009US42624 申请日期 2009.05.01
申请人 BRIDGELUX, INC.;SHUM, FRANK 发明人 SHUM, FRANK
分类号 H01L27/00 主分类号 H01L27/00
代理机构 代理人
主权项
地址