发明名称 MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY
摘要 <p>A magnetic storage element and a magnetic memory are each provided with a storage layer and a readout mechanism. The storage layer consists of a ferromagnetic material. The storage layer is provided with a first magnetization fixed region, a second magnetization fixed region, and a magnetic wall region. The first magnetization fixed region and the second magnetization fixed region are fixedly magnetized in directions symmetrical with respect to the magnetic wall region.</p>
申请公布号 WO2009133744(A1) 申请公布日期 2009.11.05
申请号 WO2009JP56480 申请日期 2009.03.30
申请人 NEC CORPORATION;FUKAMI, SHUNSUKE;SUZUKI, TETSUHIRO;NAGAHARA, KIYOKAZU;ISHIWATA, NOBUYUKI;OHSHIMA, NORIKAZU 发明人 FUKAMI, SHUNSUKE;SUZUKI, TETSUHIRO;NAGAHARA, KIYOKAZU;ISHIWATA, NOBUYUKI;OHSHIMA, NORIKAZU
分类号 H01L21/8246;G11C11/15;H01L27/105;H01L29/82;H01L43/08 主分类号 H01L21/8246
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