| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxial wafer which reduces a through dislocation and a leakage current and is suitable for manufacture of a high frequency nitride semiconductor transistor. SOLUTION: A nitride semiconductor epitaxial wafer 1 includes a growth substrate 10 for growing a nitride semiconductor, a first structure layer 12 formed on the growth substrate 10, dislocation propagation-direction change layer 14 for causing its growth on the first structure layer 12 to change a dislocation propagation direction, a second structure layer 16 formed on the dislocation propagation-direction change layer 14, and a buffer layer 20 formed on the second structure layer 16 for changing the dislocation propagation direction propagated to the second structure layer 16. COPYRIGHT: (C)2010,JPO&INPIT |
