| 摘要 |
<p>The objective is to provide an image sensor, wherein the ratio of the surface area of the light receiving part to the surface area of one pixel is high. Disclosed is a solid-state image pickup element equipped with a signal line formed on a substrate, an island-like semiconductor arranged on said signal line, and a pixel selection line connected to the top part of said island-like semiconductor. Said island-like semiconductor is equipped with a first semiconductor layer that is arranged at the bottom part of said island-like semiconductor and is connected to said signal line, a second semiconductor layer adjacent to the top of said first semiconductor layer, a gate connected to said second semiconductor layer with an intervening insulation film, a charge accumulation part that is connected to said second semiconductor layer and made of a third semiconductor layer in which the amount of charge changes when light is received, and a fourth semiconductor layer that is adjacent to the tops of said second semiconductor layer and said third semiconductor layer and is connected to said pixel selection line. Said pixel selection line is formed with a transparent conductive film, and part of said gate is arranged inside a depression formed in the side wall of said second semiconductor layer.</p> |
