| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light extraction efficiency in a semiconductor light-emitting element constituted by laminating each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on a growth substrate having translucency. <P>SOLUTION: When the light extraction efficiency is improved by providing a reflective film on the surface opposite to an extraction surface 14 of light from the light-emitting layer 12, the reflective film is constituted by including a transparent layer 15 having refractive index lower than that of the p-type semiconductor layer 13 with which the reflective film contacts, and thickness of 3/4 optical wavelength or more; and a metal layer 16, which is laminated on the transparent layer 15, and having a high reflectance. Consequently, even when light made incident at a deep angle exceeding a critical angle becomes permeate wave called as evanescent wave at an interface between GaN with high refractive index and the reflective film, most of them can be returned to the interface by including the transparent layer thickness of 3/4 optical wavelength or more, the light made incident to the reflective film at every incident angle is efficiently extracted, and lower power consumption and higher luminance are achieved. <P>COPYRIGHT: (C)2010,JPO&INPIT |
