发明名称 |
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME |
摘要 |
An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.
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申请公布号 |
US2009274883(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20080177167 |
申请日期 |
2008.07.22 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LIU PO-CHUN;GUO YIH-DER;CHI TUNG-WEI;CHAO CHU-LI |
分类号 |
B32B3/10;C30B25/04 |
主分类号 |
B32B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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