发明名称 |
MANUFACTURING METHOD OF INVERSE STAGGERED POLY-SI TFT WITH CENTER OFF-SET |
摘要 |
Disclosed herein is a method for manufacturing a poly-Si TFT with a center offset structure, including (1) preparing a buffer layer on a substrate, (2) preparing a gate electrode with a center offset structure on the buffer layer, (3) forming a gate insulating film on the gate electrode, (4) forming an active layer on the gate insulating film, (5) depositing an n+ amorphous silicon based ohmic contact layer over the active layer, (6) placing source/drain electrodes on the n+ amorphous silicon based ohmic contact layer, and (7) forming a passivation film as a protective layer on the source/drain electrodes. According to the disclosed method, an offset pattern is formed in the center of a gate constituting the TFT to form an offset region in the middle of an active layer channel, so that complicated processes for fabrication of the TFT may be simplified and leakage current may be noticeably inhibited. |
申请公布号 |
WO2009134075(A2) |
申请公布日期 |
2009.11.05 |
申请号 |
WO2009KR02255 |
申请日期 |
2009.04.29 |
申请人 |
KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION;JANG, JIN;OH, JAE-HWAN;KANG, DONG-HAN |
发明人 |
JANG, JIN;OH, JAE-HWAN;KANG, DONG-HAN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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