| 摘要 |
<p>This invention provides a compound semiconductor laminate, which can realize the formation of an InSb film on an Si substrate and can realize the application and development on a commercial scale to magnetic sensors such as hall elements and magnet resistance elements, optical devices such as infrared sensors, and electronic devices such as transistors, and a process for producing the compound semiconductor laminate. An active layer (2), which is an As-free compound semiconductor, is provided directly on the Si substrate (1). As is present in the interface of the active layer (2) and a single crystal layer of the Si substrate (1). The compound semiconductor contains at least nitrogen. The compound semiconductor is a thin film of a single crystal. The Si substrate (1) is a bulk single crystal substrate or a thin-film substrate of which the uppermost layer is formed of Si.</p> |
