| 摘要 |
<p>The invention relates to an apparatus for industrial plasma processes, like plasma etching, plasma enhanced chemical water deposition and sputtering, for current measurement in radio frequency (RF) low-pressure plasmas, comprising a meter electrode (2) having an inner conductor (3) connected thereto and a dielectric (4) at least on a part of its peripheral surface (5), the meter electrode (2) together with its dielectric (4) being positioned in a flange or recess (10) within a wall (11) of a chamber (12), said apparatus being designed such that the following equation is met: Z 0 = ¼ r µ r �¢ 60 �¢ © ln �¢ D d = 50 or 75 © ,
wherein Z 0 is the characteristic impedance of the apparatus (1), µ r is the relative permeability and µ r is the dielectric constant of the dielectric (4), respectively, D is the inner diameter of said flange or recess (10) and d is the outer diameter of said inner conductor (3) of the meter electrode (2).</p> |
