发明名称 Method for correcting a mask design layout
摘要 A method for performing a mask design layout resolution enhancement includes determining a level of correction for the design layout for a predetermined parametric yield with a minimum total correction cost. The design layout is corrected at the determined level of correction based on a correction algorithm if the correction is required. In this manner, only those printed features on the design layout that are critical for obtaining the desired performance yield are corrected, thereby reducing the total cost of correction of the design layout.
申请公布号 US7614032(B2) 申请公布日期 2009.11.03
申请号 US20060637209 申请日期 2006.12.11
申请人 THE REGENTS OF THE UNIVERISITY OF CALIFORNIA;THE REGENTS OF THE UNIVERSITY OF MICHIGAN 发明人 KAHNG ANDREW B.;GUPTA PUNEET;SYLVESTER DENNIS;YANG JIE
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项
地址