| 摘要 |
A halftone type phase shift mask having a semitranslucent film pattern and a shielding film pattern provided on a transparent substrate in this order is constituted in such a manner that each of the reflectances of the transparent substrate, the semitranslucent film pattern and the shielding film pattern for an inspecting light represents a difference which can detect the semitranslucent film pattern and the shielding film pattern based on a reflected light generated when the inspecting light is irradiated on the mask.
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