发明名称 |
Bipolar transistor with isolation and direct contacts |
摘要 |
A bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved fT, Fmax and drive current.
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申请公布号 |
US7611953(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20070677776 |
申请日期 |
2007.02.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AHLGREN DAVID C.;FREEMAN GREGORY G.;PAGETTE FRANCOIS;SCHNABEL CHRISTOPHER M.;TOPOL ANNA W. |
分类号 |
H01L21/331;H01L29/737;H01L29/80 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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