发明名称 High accuracy, high temperature, redundant media protected differential transducers
摘要 A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.
申请公布号 US7610812(B2) 申请公布日期 2009.11.03
申请号 US20070716289 申请日期 2007.03.09
申请人 KULITE SEMICONDUCTOR PRODUCTS, INC. 发明人 KURTZ ANTHONY D.;NED ALEXANDER A.
分类号 G01L9/16 主分类号 G01L9/16
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