N-TYPE TRANSISTOR, PRODUCTION METHODS FOR N-TYPE TRANSISTOR SENSOR AND N-TYPE TRANSISTOR-USE CHANNEL, AND PRODUCTION METHOD OF NANOTUBE STRUCTURE EXHIBITING N-TYPE SEMICONDUCTOR-LIKE CHARACTERISTICS,申请号KR20077017724-传众专利搜索

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发明名称	N-TYPE TRANSISTOR, PRODUCTION METHODS FOR N-TYPE TRANSISTOR SENSOR AND N-TYPE TRANSISTOR-USE CHANNEL, AND PRODUCTION METHOD OF NANOTUBE STRUCTURE EXHIBITING N-TYPE SEMICONDUCTOR-LIKE CHARACTERISTICS
摘要
申请公布号	KR100924668(B1)	申请公布日期	2009.11.03
申请号	KR20077017724	申请日期	2006.02.10
申请人		发明人
分类号	H01L21/336;G01N27/414;H01L29/06;H01L29/786	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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