发明名称 SWITCHING MEANS HAVING CNT EMITTER OF A-SE IMAGE SENSOR AND MANUFACTURING METHOD OF THE SAME
摘要 PURPOSE: A switching means having CNT emitter of a-se image sensor and manufacturing method of the same are provided to improve the uniformity of the switching means and to supply stable current. CONSTITUTION: The first gate electrode is formed in the upper part of the glass substrates(100). The first insulation layer(120) is formed in the upper part of the first gate electrode(110). The amorphous silicon layer(130) is formed in the upper part of the first insulation layer. The source electrode and drain electrode are formed by injecting the p-type or the n-type dopant into both sides of the amorphous silicon layer. The metal layer(160) is applied on the source electrode and the upper part of drain electrode. The carbon nanotube emitter(170) is formed in the upper part of drain electrode.
申请公布号 KR20090113726(A) 申请公布日期 2009.11.02
申请号 KR20080039607 申请日期 2008.04.28
申请人 UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY 发明人 PARK, KYU CHANG;JANG, JIN
分类号 H01L27/146;H01L27/24 主分类号 H01L27/146
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