POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of shutting off current more steadily when the power semiconductor element fails by preventing generation of arcs when a low melting point metal portion is blown out. SOLUTION: A first electric wiring Wb1 is made of a first metal and has a first end Eb1 electrically connected to a power semiconductor element. A second electric wiring Wb2 is made of a second metal and has a second end Eb2 opposing to the first end Eb1 with a space between the ends. A low melting point metal portion LM is made of a metal of a lower melting point than the melting point of each of the first and second metals and electrically connects the first end Eb1 and the second end Eb2 with each other. A heater HT can heat at least part of the low melting point metal portion LM above the melting point of the low melting point metal portion LM. The high resistance portions Rb1 and Rb2 are provided between the first end Eb1 and the second end Eb2 and made of a material having a higher resistivity than the resistivity of each of the first and second metals. COPYRIGHT: (C)2010,JPO&INPIT