| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for simply analyzing impurity existing on an outer circumferential surface of a semiconductor substrate. Ž<P>SOLUTION: The semiconductor substrate 4 for measurement target is sandwiched by a stage 2 of divided structure, and a flat part F centering around the outer circumferential surface of the semiconductor substrate 4 is formed by the outer circumferential surface of the semiconductor substrate 4 and the outer circumferential surface of the stage 2. The flat part F formed by the outer circumferential surface of the semiconductor substrate 4 and the outer circumferential surface of the stage 2 is irradiated with X-ray under total reflection conditions to detect fluorescent X-ray of the impurity generated from the outer circumferential surface of the semiconductor substrate 4. A contamination state by the impurity on the outer circumferential surface of the semiconductor substrate 4 is evaluated on the basis of a detection result of the florescent X-ray. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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