| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an SOI substrate that is a transparent insulating substrate in which a silicon thin film is formed on one main surface while a main surface at a side opposite to a side where the silicon thin film is formed is roughened by suppressing the generation of metal impurities and particles by a simple method. SOLUTION: The method is provided for manufacturing the SOI substrate comprising a transparent insulating substrate, a silicon thin film formed on a first main surface of the transparent insulating substrate, and a roughened second main surface which is opposite to the first main surface. The method comprises steps of preparing the transparent insulating substrate, specular working at least the first main surface of the transparent insulating substrate, forming a silicon film on the first main surface of the transparent insulating substrate, and laser-machining the second main surface of the transparent insulating substrate so as to roughen the second main surface by a laser. COPYRIGHT: (C)2010,JPO&INPIT |
