| 发明名称 |
METHOD OF MANUFACTURING A SI<sub |
| 摘要 |
<p>Disclosed are a method of manufacturing a Si(1-v-w-x)CwAlxNv substrate that prevents the occurrence of cracks and is easy to process, a method of manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate and an epitaxial wafer. The method of manufacturing a Si(1-v-w-x)CwAlxNv substrate (10a) comprises the following processes: first, a Si substrate (11) is prepared; next, a Si(1-v-w-x)CwAlxNv layer (0<v<1, 0<w<1, 0<x<1, 0<v+w+x<1) is grown on the Si substrate at a temperature below 550°C.</p> |
| 申请公布号 |
WO2009131061(A1) |
申请公布日期 |
2009.10.29 |
| 申请号 |
WO2009JP57719 |
申请日期 |
2009.04.17 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;SATOH, ISSEI;MIYANAGA, MICHIMASA;FUJIWARA, SHINSUKE;NAKAHATA, HIDEAKI |
发明人 |
SATOH, ISSEI;MIYANAGA, MICHIMASA;FUJIWARA, SHINSUKE;NAKAHATA, HIDEAKI |
| 分类号 |
C30B29/38;C23C14/06;C30B23/08 |
主分类号 |
C30B29/38 |
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