| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device equipped with an embedding structure wherein a current constriction function is never rapidly lost even when an injection current is increased. Ž<P>SOLUTION: This optical semiconductor device is provided with: an n-type semiconductor substrate; a mesa structure where a cross-sectionally projecting semiconductor laminate structure is extended on the semiconductor substrate; a pn embedding structure having an embedding layer formed of a p-type first semiconductor material, and laminated on the semiconductor substrate, and a current constriction layer formed of an n-type first semiconductor material, and laminated on the embedding layer, and covering both side faces of the mesa structure; a first electronic barrier layer formed of a p-type second semiconductor material having energy at the lower end of a conduction band higher than that of the first semiconductor material, and laminated on the mesa structure and the pn-type embedding structure; and a clad layer formed of a p-type semiconductor material, and laminated on the first electronic barrier layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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