METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to prevent the deterioration of an element property while maximizing the productivity of a vertical transistor. CONSTITUTION: A method for forming a semiconductor device is comprised of the steps: forming an upper pillar by using a hard mask pattern which is arranged by a certain interval as an etch mask; forming a lower pillar by performing isotropy etching of the semiconductor with a hard mask pattern(42) and the upper pillar(44); forming a gate oxidation film over the semiconductor substrate(40) including the upper and lower pillar; forming the gate electrode over the surface of the gate oxidation film; and forming the insulating layer over the surface of the gate electrode(50).