| 摘要 |
<p>Provided is an EUV mask wherein deterioration of contrast of reflected light at a mask pattern boundary section, especially deterioration of contrast of reflected light at a boundary section at a mask pattern outer periphery, is suppressed. An EUV mask blank to be used for manufacturing the EUV mask is also provided. In the reflective mask blank for EUV lithography, a reflecting layer for reflecting EUV light and an absorber layer for absorbing EUV light are formed on a substrate in this order. At least on a part of the substrate, a step is arranged between a portion, from which the absorber layer is to be removed when the substrate is patterned, and a portion, which is adjacent to such portion and has the absorber layer not to be removed from when the substrate is patterned.</p> |
