| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cleaning method of a chamber (etching processing chamber) capable of stopping production of particles (foreign matter) when particles not smaller than 2.0μm are produced. <P>SOLUTION: The anterior half of chamber cleaning is Cl<SB>2</SB>cleaning using Cl<SB>2</SB>, the posterior half thereof is O<SB>2</SB>cleaning using O<SB>2</SB>, and vacuuming is carried out between the Cl<SB>2</SB>cleaning and the O<SB>2</SB>cleaning. A plurality of times of vacuuming is carried out in the processing time of the Cl<SB>2</SB>cleaning. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
