| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a solid-state imaging device whose sensitivity is higher than conventionally and which is capable of reducing the variations in the sensitivity. SOLUTION: Metal wires 102, 103 are formed on an effective pixel region A and a region B outside of the effective pixel region on a semiconductor substrate 100, while etching stop layers 118 are formed on the metal wires. Furthermore, an insulating film 119 is formed on the etching stop layer, while another metal wire 104 is formed on the insulating film 119 on a region lying outside of the effective pixel. Next, the insulating film 119 of the effective pixel region is removed, by employing the etching stop layer 118, and an interlayer lenses 105 are formed on a level difference of the effective pixel region, after the insulating film 119 has been removed. COPYRIGHT: (C)2010,JPO&INPIT |
