| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of accurately measuring the thickness (thickness of Si thickness + the thickness of circuit pattern) of a wafer, using an easy method. Ž<P>SOLUTION: The thickness of the thin disk-like wafer 3, whose outer peripheral edge has a notch section 1 and one surface is stuck with protective tape 5, is measured, by butting and fixing the surface 5a of the protective tape 5 stuck against the wafer 3 on a chuck stage 2 to the chuck stage 2 of the wafer 3, radiating a laser beam of a reflection type laser sensor 6 to the proximity of the notch section of the wafer 3; capturing the light reflected from the surface of the wafer 3 and the reflected light from the back surface 5b of the protective tape 5 exposed on the notch section 1, respectively; and acquiring the positional data of the surface of the wafer 3 and the back surface 5b of the protective tape 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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