| 摘要 |
<p>Provided is a method for fabricating a bottom gate/bottom contact type thin film semiconductor device (1) which can maintain the boundary between a gate insulation film and a thin film semiconductor layer in a preferable state without being affected by a source/drain electrode and accordingly, can have a preferable characteristic in spite of the fine structure. A first gate insulation film (7-1) is formed in a state to cover a gate electrode (5) formed on a substrate (3). A pair of source/drain electrode (9) is formed on the first gate insulation film (7-1). After this, a second gate insulation film (7-2) is selectively formed only on thefirst insulation film (7-1) exposed from the source/drain electrode (9). Next, a thin film semiconductor layer (11) is formed in contact with the source/drain electrode (9) so as to continuously cover the source/drain electrode (9), the second gate insulation film (7-2), and the first gate insulation film (7-1).</p> |
