| 摘要 |
<p>PURPOSE: A method for producing phase shift mask is provided to form silicon oxide film through atom layer deposition method (ALD) to have phase difference with light-transmitting region. CONSTITUTION: A method for manufacturing phase shift mask comprises: a step of forming light shield layer and resist layer pattern on the transparent substrate (100); a step of etching exposed part of light shield layer with etching mask to form light shield layer pattern; a step of etching transparent substrate exposed by photo shield pattern to form phase shift area (131); a step of removing resist film pattern; a step of washing transparent substrate; a step of measuring second depth of phase shift area by washing; and a step of forming compensation layer (130) in phase shift area.</p> |
