发明名称 |
ZnO SEMICONDUCTOR ELEMENT |
摘要 |
To solve the foregoing problems, provided is a ZnO-based semiconductor element having an entirely novel function distinct from hitherto, using a ZnO-based semiconductor and organic matter for an active role. An organic electrode 2 is formed on a ZnO-based semiconductor 1, and an Au film 3 is formed on the organic electrode 2. An electrode formed of a multilayer metal film including a Ti film 4 and an Au film 5 is formed on the back surface of the ZnO-based semiconductor 1 so as to be opposed to the organic electrode 2. A bonding interface between the organic electrode 2 and the ZnO-based semiconductor 1 is in a pn junction-like state. Thus, rectification occurs therebetween. |
申请公布号 |
EP2112695(A1) |
申请公布日期 |
2009.10.28 |
申请号 |
EP20080710768 |
申请日期 |
2008.02.04 |
申请人 |
ROHM CO., LTD. |
发明人 |
NAKAHARA, KEN;YUJI, HIROYUKI;KAWASAKI, MASASHI;OHTOMO, AKIRA;TSUKAZAKI, ATSUSHI;FUKUMURA, TOMOTERU;NAKANO, MASAKI |
分类号 |
H01L29/47;H01L21/28;H01L21/338;H01L29/22;H01L29/423;H01L29/778;H01L29/812;H01L29/861;H01L29/872;H01L31/10 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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