| 摘要 |
PURPOSE: A group III nitride based semiconductor light emitting diode of a vertical structure and a manufacturing method thereof are provided to improve yield of a fab process by preventing a wafer bending phenomenon in bonding wafers. CONSTITUTION: A group III nitride based semiconductor light emitting diode of a vertical structure includes a partial n-type ohmic contact electrode structure(230), a light emitting structure, a p-type electrode structure(400), and a heat sink supporting bar(190). The light emitting structure is formed by laminating a bottom nitride based clad layer, a nitride based active layer, and a top nitride based clad layer on a bottom part of the partial n-type ohmic contact electrode structure. The p-type electrode structure is formed in a bottom layer part of the light emitting structure, and includes a transparent current injection layer, a first passivation layer, a conductive line film body, and a reflective current spreading layer. |
