发明名称 Resist cover film-forming material, process for forming resist pattern, semiconductor device and process for manufacturing the same
摘要 The present invention can provide a resist cover film-forming material which is suitably used for a resist cover film for liquid immersion exposure and can transmit ArF excimer laser lights and provide a process for forming a resist pattern using the resist cover film-forming material. The resist cover film-forming material contains a resin having an alicyclic skeleton at any of the main chain and the side chains; it is nonphotosensitive and is used in forming a resist cover film that covers a resist film during liquid immersion exposure. The process for forming of a resist pattern includes forming a resist film on a surface of a workpiece to be processed, forming a resist cover film on the resist film using the resist cover film-forming material of the present invention, irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and developing the resist film.
申请公布号 US7608386(B2) 申请公布日期 2009.10.27
申请号 US20060442147 申请日期 2006.05.30
申请人 FUJITSU LIMITED 发明人 NOZAKI KOJI;KOZAWA MIWA
分类号 G03F7/00;G03F7/004 主分类号 G03F7/00
代理机构 代理人
主权项
地址