发明名称 |
CAPACITOR WITH CRYSTALLIZATION AID LAYER AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A capacitor with crystallization aid layer and a method for manufacturing the same are provided to obtain the high dielectric constant and the low leakage current simultaneously by lowering the crystallization temperature. CONSTITUTION: A capacitor with crystallization aid layer is comprised of a bottom electrode(101), a crystallization helping layer(102) on the bottom electrode, the dielectric layer(103) formed on the crystallization helping layer, and an upper electrode(104) on the dielectric layer. The crystallization helping layer contains at least one element selected from zirconium, aluminum, hafnium and lanthanum.
|
申请公布号 |
KR20090111195(A) |
申请公布日期 |
2009.10.26 |
申请号 |
KR20080036832 |
申请日期 |
2008.04.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, JEONG YEOP;LEE, KEE JEUNG;KIL, DEOK SIN;KIM, YOUNG DAE;KIM, JIN HYOCK;DO, KWAN WOO;PARK, KYUNG WOONG |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|