| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for removing level and defect caused by a stress from a single crystal silicon thin film formed by an SOI technique. Ž<P>SOLUTION: First, the single crystal silicon thin film 106 is formed using representative sticking SOI technique such as Smart-Cut or ELTRAN. Then, the single crystal silicon thin film 106 is patterned to form an island-like silicon layer 108, and is subjected to thermal oxidation processing in an oxidation atmosphere containing halogen element, thereby obtaining the island-like silicon layer 109 in which trap level and defect are removed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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