发明名称 |
METHOD FOR TREATING SEMICONDUCTOR PROCESSING COMPONENTS AND COMPONENTS FORMED THEREBY |
摘要 |
A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns into the outer surface portion, and the skin impurity level is not greater than 80% of the bulk impurity level |
申请公布号 |
WO2009085703(A3) |
申请公布日期 |
2009.10.22 |
申请号 |
WO2008US86862 |
申请日期 |
2008.12.15 |
申请人 |
SAINT-GOBAIN CERAMICS & PLASTICS, INC. |
发明人 |
NARENDAR, YESHWANTH;BUCKLEY, RICHARD, F. |
分类号 |
H01L21/673 |
主分类号 |
H01L21/673 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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