| 摘要 |
PROBLEM TO BE SOLVED: To provide a thyristor which improves off-voltage rise rate resistance at a high temperature and prevent malfunction. SOLUTION: The thyristor 1 includes: a first shortcircuited section 61 which penetrates a fourth semiconductor area 24 and electrically shortcircuits between a first main electrode 3 and a second semiconductor area 22; and a second shortcircuited section 62 which penetrates the fourth semiconductor area 24, electrically shortcircuits between the first main electrode 3 and the second semiconductor area 22 and includes a negative temperature coefficient in a resistance value. The second shorcircuited section 62 includes a temperature compensation layer 622. COPYRIGHT: (C)2010,JPO&INPIT
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