| 摘要 |
<p>A method of manufacturing a gas electron multiplier is shown. The method comprises a step of preparing a blank sheet (28) comprised of an insulating sheet (12) with first and second metal layers (14, 16) on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes (18) through the first metal layer, an insulating sheet hole forming step, in which the holes (18) formed in the first metal layer (14) are extended through the insulating layer (12) by etching from the first surface side only, and a second metal layer hole forming step, in which the holes (18) are extended through the second metal layer (16). In one embodiment, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer (14) remains unaffected during etching of the second metal layer (16). In another embodiment, in the second metal layer hole forming step, the first and second metal layers (14, 16) are etched from the outside, thereby reducing the initial thicknesses of the first and second metal layers (14, 16) and the second metal layer (16) is simultaneously etched through the holes (18) in the first metal layer (14) and the insulating sheet (12), said etching being maintained until the holes (18) extend through the second metal layer, wherein said initial average thickness of the first and second metal layers (14, 16) is between 6.5 µm and 25 µm, preferably between 7.5 µm and 12 µm.</p> |
